BT137-800E TO-220AB Rev. 4 — 25 March 2011 Product data sheet Product profile 1.1 General description
Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data Quick reference data Parameter Conditions NXP Semiconductors BT137-800E Quick reference data …continued Parameter Conditions Static characteristics Pinning information Pinning information Description Simplified outline Graphic symbol SOT78 (TO-220AB) Ordering information Ordering information Type number Description
plastic single-ended package; heatsink mounted; 1 mounting
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Limiting values Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).Parameter Conditions
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
IT = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs;
RMS on-state current as a function of mounting RMS on-state current as a function of surge base temperature; maximum values duration; maximum values
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Total power dissipation as a function of RMS on-state current; maximum values
tp ≤ 20 ms(1) dIT/dt limit(2) T2- G+ quadrant limit
Non-repetitive peak on-state current as a function of pulse width; maximum values
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum Thermal characteristics Thermal characteristics Parameter Conditions Transient thermal impedance from junction to mounting base as a function of pulse width
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Characteristics Characteristics Parameter Conditions Static characteristics Dynamic characteristics
gate-controlled turn-on ITM = 12 A; VD = 800 V; IG = 0.1 mA;
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Normalized gate trigger current as a function of Normalized latching current as a function of junction temperature junction temperature
Vo = 1.264 V Rs = 0.038 Ω(1) Tj = 125 °C; typical values(2) Tj = 125 °C; maximum values(3) Tj = 25 °C; maximum values
Normalized holding current as a function of Fig 10. On-state current as a function of on-state junction temperature
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Fig 11. Normalized gate trigger voltage as a function of junction temperature
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB DIMENSIONS (mm are the original dimensions) Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. REFERENCES EUROPEAN ISSUE DATE PROJECTION Fig 12. Package outline SOT78 (TO-220AB)
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes • Various changes to content.
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E Legal information Data sheet status Document status Product status Definition
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NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 — 25 March 2011 NXP Semiconductors BT137-800E 11. Contents
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Date of release: 25 March 2011 Document identifier: BT137-800E
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